cqdd-25m CQDD-25N surface mount 25 amp silicon triac 600 thru 800 volts description: the central semiconductor cqdd-25m series type is an epoxy molded silicon triac designed for full wave ac control applications featuring gate triggering in all four (4) quadrants. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol cqdd-25m CQDD-25N units peak repetitive off-state voltage v drm 600 800 v rms on-state current (t c =90c) i t(rms) 25 a peak one cycle surge, t=8.3ms i tsm 150 a i 2 t value for fusing, t=8.3ms i 2 t 94 a 2 s peak gate power, tp=10s p gm 40 w average gate power dissipation p g (av) 1.0 w peak gate current, tp=10s i gm 10 a peak gate voltage, tp=10s v gm 16 v critical rate of rise of on-state current repetitive, f=60hz di/dt 10 a/s operating junction temperature t j -40 to +125 c storage temperature t stg -40 to +150 c thermal resistance ja 60 c/w thermal resistance jc 1.7 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm rated v drm 10 a i drm rated v drm , t c =125c 2.0 ma i gt v d =12v, r l =10 , quad i, ii, iii 11.1 30 ma i gt v d =12v, r l =10 , quad iv 28.2 60 ma i h i t =100ma 18.4 50 ma v gt v d =12v, r l =10 , quad i, ii, iii 1.03 1.50 v v gt v d =12v, r l =10 , quad iv 1.74 2.50 v v tm i tm =35a, tp=380s 1.80 v dv/dt v d = 2 / 3 v drm , r gk = , t c =125c 6.0 v/s d 2 pak case r2 (12-february 2010) www.centralsemi.com
cqdd-25m CQDD-25N surface mount 25 amp silicon triac 600 thru 800 volts lead code: 1) mt1 2) mt2 3) gate 4) mt2 marking: full part number d 2 pak case - mechanical outline www.centralsemi.com r2 (12-february 2010)
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